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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B 2N5401C EPITAXIAL PLANAR PNP TRANSISTOR C High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA Low Noise : NF=8dB (Max.) F H A FEATURES N K D E G F L 1 2 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Ta=25 (Tc=25 ) ) Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC PC Tj Tstg RATING -160 -150 -5 -600 -100 625 1.5 150 -55 150 UNIT V V V mA mA mW W M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. COLLECTOR 3. BASE TO-92 1997. 5. 13 Revision No : 0 1/2 2N5401C ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage * SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) DC Current Gain * hFE(2) hFE(3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Small-Signal Current Gain Noise Figure * * VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob hfe NF TEST CONDITION VCB=-120V, IE=0 VCB=-120V, IE=0, Ta=100 VEB=-3V, IC=0 IC=-0.1mA, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-10V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz VCE=-10V, IC=-1mA, f=1kHz VCE=-5V, IC=-250 A Rg=1k , f=10Hz 15.7kHz MIN. -160 -150 -5 50 60 50 100 40 TYP. MAX. -50 -50 -50 240 -0.2 -0.5 -1.0 -1.0 300 6 200 8 dB V UNIT nA A nA V V V V MHz pF * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 1997. 5. 13 Revision No : 0 2/2 |
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